Guide：
Power Semiconductor Device is the core device for power electronic devices to achieve energy conversion and power management. Its main functions include frequency conversion, voltage transformation, rectification, power conversion, and management. The voltage processing range ranges from tens of volts to thousands of volts, and the current capacity can reach up to thousands of amperes.Semight 3500V High Voltage SMU S3030F Designed for characteristic testing of high-voltage electronic and power semiconductor devices, as well as characterization of other components and materials that require high-voltage and high-precision measurements.

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Advantages

The S3030F can provide a maximum resistance measurement range of ± 3500V, ± 120mA (DC), a maximum of 10 GΩ, and a maximum power output of 180W, Widely used in testing and research fields such as power semiconductor characteristics, GaN, SiC characterization, composite materials, high-voltage leakage current, etc.

1> High voltage and high power
± 3500V/± 120mA (DC)/180W

2> High precision measurement
Measurement resolution up to 1fA/100uV

3> High speed measurement
  ADC sampling rate of up to 1M

4> Support for super large resistance measurement
Maximum resistance measurement range 10GΩ

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Example of High Voltage Source Meter Application

1>SiC MOSFET drain cutoff current test IDSS
IDSS: The leakage current generated when a specified voltage is applied between the drain and source in the event of a short circuit between the gate and source

SiC MOSFET V (BR)DSS Test: In the case of a short circuit between the gate and source electrodes, use a high-voltage source meter to scan the current between the drain and source electrodes, as shown in the above figure. Using the List scanning function, scan the current source and output 20 UA, 200 uA, 1000 uA, 5000 uA, 10000 uA, scan and measure the voltage at both ends of the VDS using a high-voltage source meter.

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Semight Precision SMU