Wafer Level Burn-In
WLR3500
HV SiC Wafer burn-in System
The WLR3500 wafer burn-in system is designed to perform HTGB and HTRB burn-in of 6 wafers at one time, which can switch the aging conditions automatically , perform Vth test for each die, meet different cost requirements according to different configuration requirements and implement configurable R&D applications and mass production applications for customers, the burn-in time can range from a few minutes to tens of hours or even thousands of hours, each channel can be provided with the over-current protection independently , and result MAP data can be provided for analysis.
Feature
Support multiple wafer aging
Support aging of SiC and GaN wafer productsHigh precision parameter test
Support parameter test Idss, Igss, VthHigh precision leakage current test
The highest precision leakage current resolution can reach 0.1 nANitrogen protection
Support nitrogen protection to prevent high voltage spark and PAD oxidationOvercurrent protection
Overcurrent protection, short-circuit current instantaneous response<100 nsHigh temperature resistant design
Drawer heating related to 200 ℃High temperature uniformity
Uniformity ± 3 ℃, accuracy < 1 ℃, resolution 0.1 ℃Rich software functions
Support online editing and testing Recipe / SPECFunctions and advantages
Fixture, single-layer drawer and whole rack
HV SiC Wafer burn-in System WLR3500 has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.Single-layer drawer design
Circuit of Each layer can be independently controlled, each single-layer works can be implemented in different modes, and different burn-in verification can be performed by the burn-in plan.Parameter | ndex |
Applicable products | GaN, SiC Wafer |
Applicable packaging | 4inch,6inch Wafer |
Aging parameters | HTGB, HTRB |
Test parameters | Igss, Idss, Vth |
System size(mm) | 2100(W) X 1900(H) X 1800(D) |
System power consumption | <32 kW |
Nitrogen protection | >0.6 mPa Access |
temperature range | Normal temperature - 200 ℃ |
Voltage range | Gate ± 75 V, source 2000 V |
System channel | 720 |
Number of system layers | 6th floor |
Current voltage overshoot | No overshoot in any case |
MES docking | Support MES docking |
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