SiC Wafer burn-in System-Semight Instruments

Wafer Level Reliability

WLBI075S

SiC Wafer burn-in System

Semight Instrument SiC Wafer burn-in System WLBI075S can be configured with 18 burn-in layers at most, each burn-in layer supports 6 & 8-inch wafers, the HTGB burn-in for a maximum of 1500 products performed for each wafer, it supports Igss and Vth tests in the system and can be widely used in the testing and research fields of power semiconductor characteristics, GaN and SiC characterization, composite materials, wafer technology, etc.

Datasheet

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Feature

Also supports htgb
Compared with GB & RB compatibility, this has a higher capacity
Vgs(th)Test function
It can be switched to Vth test and single product test during aging
Real time monitoring of gate current
Timely discover product abnormalities and record data in case of abnormalities
The minimum current measurement resolution can reach 0.1 nA
Accurate measurement of leakage current
GB voltage: up to 75 V
Reserve buffer for subsequent process optimization
Monitoring current sampling rate
1500 products polling within 1 minute
Product abnormal protection function
With gate protection circuit, the output can be closed in case of short circuit
Heating power and temperature control accuracy
＞120℃: Uniformity ±2℃, accuracy <1℃, resolution 0.1℃; ＜120℃: Uniformity ±1℃, accuracy <1℃, resolution 0.1℃

Functions and advantages

Fixture, single-layer drawer and whole rack
SiC Wafer burn-in System WLBI075S has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.

Fixture design The fixture is divided into two parts: the probe card and the heat sink, and the wafers can be combined via the Aligner equipment and placed in the burn-in system for burn-in.
Single-layer drawer design
Circuit of Each layer can be independently controlled, different single-layer works can be implemented in different modes, and different burn-in verification can be performed by scheduling the burn-in plan.

Gate voltmeter specification
Voltage setting accuracy	Range	Set resolution	Accuracy (1 year) ± (% reading + offset)
	±75 V	10 mV	0.1%+0.2 V
	±20 V	5 mV	0.1%+0.1 V
Overshoot	<1% (typical value)
Total power	30 W
Quantity of channels	1500 (each burn-in layer)
Gate voltmeter specification
Voltmeter display accuracy	Range	Display resolution	Accurac y (1 year) ± (% reading + offset)
	±75 V	10 mV	0.1%+0.2 V
	±20 V	5 mV	0.1%+0.1 V
Number of channels	1500 (each burn-in layer)
Gate ammeter specification
Current display accuracy	Range	Display resolution	Accuracy (1 year) ± (% reading + offset)
	10 uA	500 pA	0.1% + 50 nA
	1 uA	50 pA	0.1% + 5 nA
	100 nA	10 pA	0.1% + 0.5 nA
	10 nA	1 pA	0.1% + 0.1 nA
Quantity of channels	12 channels (125 channels for one board)

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