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Wafer Level Reliability

WLBI075S

SiC Wafer burn-in System


Semight Instrument SiC Wafer burn-in System WLBI075S can be configured with 18 burn-in layers at most, each burn-in layer supports 6 & 8-inch wafers, the HTGB burn-in for a maximum of 1500 products performed for each wafer, it supports Igss and Vth tests in the system and can be widely used in the testing and research fields of power semiconductor characteristics, GaN and SiC characterization, composite materials, wafer technology, etc.


Feature

  • Also supports htgb

    Compared with GB & RB compatibility, this has a higher capacity
  • Vgs(th)Test function

    It can be switched to Vth test and single product test during aging
  • Real time monitoring of gate current

    Timely discover product abnormalities and record data in case of abnormalities
  • The minimum current measurement resolution can reach 0.1 nA

    Accurate measurement of leakage current
  • GB voltage: up to 75 V

    Reserve buffer for subsequent process optimization
  • Monitoring current sampling rate

    1500 products polling within 1 minute
  • Product abnormal protection function

    With gate protection circuit, the output can be closed in case of short circuit
  • Heating power and temperature control accuracy

    >120℃: Uniformity ±2℃, accuracy <1℃, resolution 0.1℃; <120℃: Uniformity ±1℃, accuracy <1℃, resolution 0.1℃

Functions and advantages

  • Fixture, single-layer drawer and whole rack

    SiC Wafer burn-in System WLBI075S has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.

    Fixture design The fixture is divided into two parts: the probe card and the heat sink, and the wafers can be combined via the Aligner equipment and placed in the burn-in system for burn-in.
  • Single-layer drawer design

    Circuit of Each layer can be independently controlled, different single-layer works can be implemented in different modes, and different burn-in verification can be performed by scheduling the burn-in plan.

Gate voltmeter specification

Voltage setting accuracy Range Set resolution

Accuracy (1 year) ± (% reading + offset)

±75 V 10 mV 0.1%+0.2 V
±20 V 5 mV 0.1%+0.1 V
Overshoot <1% (typical value)
Total power 30 W

Quantity of channels

1500 (each burn-in layer)

Gate voltmeter specification

Voltmeter display accuracy


Range Display resolution

Accurac

y (1 year) ± (% reading + offset)

±75 V 10 mV 0.1%+0.2 V
±20 V 5 mV 0.1%+0.1 V
Number of channels

1500 (each burn-in layer)

Gate ammeter specification

Current display accuracy Range Display resolution Accuracy (1 year) ± (% reading + offset)
10 uA 500 pA 0.1% + 50 nA
1 uA 50 pA 0.1% + 5 nA
100 nA 10 pA 0.1% + 0.5 nA
10 nA 1 pA 0.1% + 0.1 nA

Quantity of channels

12 channels (125 channels for one board)

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