Wafer level reliability
WLR075S
Semight Instrument SiC Wafer burn-in System WLR075 can be configured with 12 burn-in layers at most, each burn-in layer supports 4 & 6-inch wafers, the HTGB burn-in for a maximum of 1024 products performed for each wafer, it supports Igss and Vth tests in the system and can be widely used in the testing and research fields of power semiconductor characteristics, GaN and SiC characterization, composite materials, wafer technology, etc.
Feature
Also supports htgb
Compared with GB & RB compatibility, this has a higher capacityVgs(th)Test function
It can be switched to Vth test and single product test during agingReal time monitoring of gate current
Timely discover product abnormalities and record data in case of abnormalitiesThe minimum current measurement resolution can reach 0.1na
Accurate measurement of leakage currentGB voltage: up to 75V
Reserve buffer for subsequent process optimizationMonitoring current sampling rate
1024 products polling within 1 minuteProduct abnormal protection function
With gate protection circuit, the output can be closed in case of short circuitHeating power and temperature control accuracy
The designed heating power is 200W, the heating speed is less than 20 minutes from normal temperature to 175 ℃, the temperature control accuracy is ± 1 ℃, and the resolution is 0.1 ℃Functions and advantages
Fixture, single-layer drawer and whole rack
HV SiC Wafer burn-in System WLR3500 has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.Single-layer drawer design
Circuit of Each layer can be independently controlled, different single-layer works can be implemented in different modes, and different burn-in verification can be performed by scheduling the burn-in plan.
Gate voltmeter specification |
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Voltage setting accuracy | Range | Set resolution | Accuracy (1 year) ± (% reading + offset) |
±75 V | 10 mV | 0.1%+0.2 V | |
±20 V | 5 mV | 0.1%+0.1 V | |
Overshoot | <1% (typical value) | ||
Total power | 100 mW | ||
Quantity of channels |
1024 (each burn-in layer) |
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Gate voltmeter specification |
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Voltmeter display accuracy |
Range | Display resolution | Accurac y (1 year) ± (% reading + offset) |
±75 V | 10 mV | 0.1%+0.2 V | |
±20 V | 5 mV | 0.1%+0.1 V | |
Number of channels | 1024 (each burn-in layer) |
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Gate ammeter specification |
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Current display accuracy | Range | Display resolution | Accuracy (1 year) ± (% reading + offset) |
10 uA | 500 pA | 0.1% + 50 nA | |
1 uA | 50 pA | 0.1% + 5 nA | |
100 nA | 10 pA | 0.1% + 0.5 nA | |
10 nA | 1 pA | 0.1% + 0.1 nA | |
Quantity of channels |
8 channels (128 channels for one board) |
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