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Wafer level reliability

WLR075S

Semight Instrument SiC Wafer burn-in System WLR075 can be configured with 12 burn-in layers at most, each burn-in layer supports 4 & 6-inch wafers, the HTGB burn-in for a maximum of 1024 products performed for each wafer, it supports Igss and Vth tests in the system and can be widely used in the testing and research fields of power semiconductor characteristics, GaN and SiC characterization, composite materials, wafer technology, etc.

Feature

  • Also supports htgb

    Compared with GB & RB compatibility, this has a higher capacity
  • Vgs(th)Test function

    It can be switched to Vth test and single product test during aging
  • Real time monitoring of gate current

    Timely discover product abnormalities and record data in case of abnormalities
  • The minimum current measurement resolution can reach 0.1na

    Accurate measurement of leakage current
  • GB voltage: up to 75V

    Reserve buffer for subsequent process optimization
  • Monitoring current sampling rate

    1024 products polling within 1 minute
  • Product abnormal protection function

    With gate protection circuit, the output can be closed in case of short circuit
  • Heating power and temperature control accuracy

    The designed heating power is 200W, the heating speed is less than 20 minutes from normal temperature to 175 ℃, the temperature control accuracy is ± 1 ℃, and the resolution is 0.1 ℃

Functions and advantages

  • Fixture, single-layer drawer and whole rack

    HV SiC Wafer burn-in System WLR3500 has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.

    Fixture design The fixture is divided into two parts: the probe card and the heat sink, and the wafers can be combined via the Aligner equipment and placed in the burn-in system for burn-in.
  • Single-layer drawer design

    Circuit of Each layer can be independently controlled, different single-layer works can be implemented in different modes, and different burn-in verification can be performed by scheduling the burn-in plan.

Gate voltmeter specification

Voltage setting accuracy Range Set resolution

Accuracy (1 year) ± (% reading + offset)

±75 V 10 mV 0.1%+0.2 V
±20 V 5 mV 0.1%+0.1 V
Overshoot <1% (typical value)
Total power 100 mW

Quantity of channels

1024 (each burn-in layer)

Gate voltmeter specification

Voltmeter display accuracy


Range Display resolution

Accurac

y (1 year) ± (% reading + offset)

±75 V 10 mV 0.1%+0.2 V
±20 V 5 mV 0.1%+0.1 V
Number of channels

1024 (each burn-in layer)

Gate ammeter specification

Current display accuracy Range Display resolution Accuracy (1 year) ± (% reading + offset)
10 uA 500 pA 0.1% + 50 nA
1 uA 50 pA 0.1% + 5 nA
100 nA 10 pA 0.1% + 0.5 nA
10 nA 1 pA 0.1% + 0.1 nA

Quantity of channels

8 channels (128 channels for one board)

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