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Wafer Level Burn-In

WLBI370A

Wafer Burn-In Testing System



Semight Instruments Wafer Burn-In Testing System WLBI370A  applies to the screening of product reliability and quality monitoring of batch production. The whole system is designed to conduct single HTGB burn-in on 20 wafers, achieve automatic feeding/unloading and BI condition switching, and conduct Vth testing for each product. It meets different cost requirements based on various configuration needs, as well as the demands of customers for configurable R&D applications and high-capacity production. BI time can be configured as required, and the tested chip of each channel has separate over-current protection. MAP data is available for analysis.



Feature

  • Support SiC wafer product burn-in

    Compatible with SiC wafers of 6&8 inches
  • Multiple test functions

    Support parameter test Igss、Vth.
    Support online editing and testing of Recipe and SPE
  • Fully automatic burn-in syetem

    Support 1500 channels/layer simultaneous burn-in
    Support up to 50PCS wafer cassette(20PCS wafer simultaneous burn-in)
  • Fully automated integration

    Wafer jam loading is fully automated and integrated
    Support stitch repeatability positioning accuracy ±25um
  • High temperature resistant design

    Drawer heating is designed to withstand 180°C
  • The minimum current measurement resolution can reach 0.1 nA

    Accurate measurement of leakage current
  • Precise temperature control

    Uniformity ±1.5℃, accuracy<1℃, resolution 0.1℃
  • Product anomaly protection funtion

    The syetem hardware overcurrent protection supports nitrogen protection to prevent PAD oxidation

Functions and advantages

  • The system combines the form of integrated machine with Burn-In system and feeding/unloading system. This equipment provides more Burn-In channels, supporting simultaneous Burn-In of up to 1500 channels per wafer. It also offers more Burn-In drawers, supporting Burn-In of 20 drawers (wafers) simultaneously. By replacing different Burn-In fixtures and supporting fixtures, it enables rapid switching between aging requirements for 6-inch and 8-inch wafers.



Gate Voltage Source Specifications

Voltage Setting Accuracy

Range

Set Resolution

Accuracy (1 year) ±(% of reading + offset)

±70 V

1m V

0.1%+0.2 V

Overshoot

<1% (typical value)

Total Power

30W

Number of Channels

1 (per Burn-in layer)


Gate Voltage Meter Specifications

Voltage Meter Accuracy

Range

Screen Resolution

Accuracy (1 year)

±(% of reading + offset)

±70V

1mV

0.1%+0.2 V

Number of Channels

1 (per Burn-in layer)


Gate Current Meter Specifications

Current Meter Accuracy

Range

Screen Resolution

Accuracy (1 year)

±(% of reading + offset)

100 μA

10 nA

0.1%  + 10nA  

10μA

1nA

0.1% + 5nA

1 μA

0.1 nA

0.1% + 1 nA

100 nA

10 pA

1% + 0.5 nA

Number of Channels

16 (per Burn-in layer)



Gate Current Source (VTH)

Current Meter Accuracy

Range

Screen Resolution

Accuracy (1 year)

±(% of reading + offset)

100mA

10uA

0.1% + 100 μA

10 mA

1uA

0.1% + 10 μA

 

1 mA

100 nA

0.1% + 5 μA

 Number of Channels

1 (per Burn-in layer)


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