Wafer Level Burn-In
WLBI3800
Wafer-level full-automatic burn-in all-in-one machine
The WLBI3800FA system is designed to perform HTGB and HTRB burn-in of three wafers at a time, with automatic wafer loading and unloading.The double cassette design without any cassette replacement time, automatic switching of aging conditions, and Vth testing of each product.It can meet different cost requirements according to different configuration requirements, and provide customers with configurable R & D applications and mass production applications. The aging duration can be from a few minutes to tens of hours, or even thousands of hours, and each channel has a separate over-current protection to the device circuit under test. MAP data can be provided for analysis.
Feature
Compatible with 2,3,4,6,8 inch wafers
HTGB and HTRB are integrated in one drawer
Support parameter test Idss, Igss, Vth
Support MAP data binding, data traceability
Support simultaneous burn-in of 3PCS wafers
Support up to 2112 channels burn-in per wafer (number of channels configurable)
Support automatic loading/unloading wafer with cassette
Support double jam design, can be seamless burn-in
High-precision leakage current test
The highest accuracy leakage current resolution can reach 0.1nA
Support needle-mark repeated position
Accuracy ± 25um
Support nitrogen protection
Prevent high-pressure arc and pad oxidation
High temperature resistant design, temperature control accuracy
Drawer heating related to 200 degrees resistant design, maximum long-term working temperature of 175 degreesFunctions and advantages
Fixture, single-layer drawer and whole rack
The system combines a loader and a wafer aging equipment to be compatible with 2, 3, 4, 6, and 8 inch wafer burning. The system can support 3 layers of simultaneous burn-in, can support dual 25PCS card jams at the same time, can carry out sequential automatic burn-in, low degree of manual intervention, high degree of automation.
|
Voltage setting accuracy |
Range |
Set the resolution |
Accuracy (1 year) ± (% reading + bias) |
|
2000 V |
100mV |
0.5%+10 V |
|
|
70V |
1m V |
0.1%+0.2 V |
|
|
Overshoot |
< 1% typical |
||
|
Total power |
300W |
||
|
Number of channels |
1 (per aging layer) |
||
|
Voltmeter display accuracy |
Range |
Display resolution |
Accuracy (1 year) ± (% reading + bias) |
|
2000V |
100mV |
0.5%+10 V |
|
|
70V |
1m V |
0.1%+0.2 V |
|
|
Number of channels |
1 (per aging layer) |
||
|
Current display accuracy |
Range |
Display resolution |
Accuracy (1 year) ± (% reading + bias) |
|
1 mA |
0.1 uA |
0.1% + 50nA |
|
|
100 μA |
10 nA |
0.1% + 10nA |
|
|
10μA |
1nA |
0.1% + 5nA |
|
|
1 μA |
0.1 nA |
0.1% + 1 nA |
|
|
Number of channels |
22 (per aging layer) |
||
|
Voltage setting accuracy |
Range |
Set the resolution |
Accuracy (1 year) ± (% reading + bias) |
|
±70 V |
1m V |
0.1%+0.2 V |
|
|
Overshoot |
< 1% typical |
||
|
Total power |
30W |
||
|
Number of channels |
1 (per aging layer) |
||
|
Voltmeter display accuracy |
Range |
Display resolution |
Accuracy (1 year) ± (% reading + bias) |
|
±70V |
1mV |
0.1%+0.2 V |
|
|
Number of channels |
1 (per aging layer) |
||
|
Current display accuracy |
Range |
Display resolution |
Accuracy (1 year) ± (% reading + bias) |
|
100 μA |
10 nA |
0.1% + 10nA |
|
|
10μA |
1nA |
0.1% + 5nA |
|
|
1 μA |
0.1 nA |
0.1% + 1 nA |
|
|
100 nA |
10 pA |
1% + 0.5 nA |
|
|
Number of channels |
22, (per aging layer) |
||
|
Current display accuracy |
Range |
Display resolution |
Accuracy (1 year) ± (% reading + bias) |
|
100mA |
10uA |
0.1% + 100 μA |
|
|
10 mA |
1uA |
0.1% + 10 μA |
|
|
1 mA |
100 nA |
0.1% + 5 μA |
|
|
Number of channels |
1(per aging layer) |
||
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