Wafer Level Reliability
WLR0010
High temperature electrification reliability testing system
The wafer level reliability testing system WLR0010 is a high-temperature electrification reliability testing system for semiconductor crystal properties. The product is based on The JEDEC standard enables fast violation testing of the reliability of gate oxide layers in devices, while greatly reducing testing cycles and costs through multimode and high parallel measurements.
Features
Supports high-voltage testing
up to 3500V
High parallel measurement
up to 768 DUTs
Automatic switching of testing modes through multi-channel measurement
Support wafer level and package level testing
Platform unification
Support JEDEC device reliability testing standards
32 channels
Supports On the fly testing
and data analysis software
Support for different packaging devices
By replacing the Board and wafer probe cards
Adjustable temperature and electrical stress
Features and Benefits
Technical Indicators
|
Test Item |
TDDB/HCI/NBTI/EM |
|
|
Parallel measurement quantity (maximum) |
PLR |
768 DUTs |
|
WLR |
16 Sites Multi-site |
|
|
Single plate source |
30 Source |
|
|
Voltage |
±(20V~3500V) |
|
|
Voltage accuracy |
±20V |
0.2%RD±5mV |
|
±200V |
0.2%RD±50mV |
|
|
±2000 V |
0.2%RD±200mV |
|
|
±3500 V |
0.2%RD±300mV |
|
|
Voltage resolution |
10 μV |
|
|
Current accuracy |
10mA~100mA |
0.2%RD±500μA |
|
1mA~10mA |
0.2%RD±50μA |
|
|
100μA~1mA |
0.2%RD±500nA |
|
|
10μA~100μA |
0.2%RD±50nA |
|
|
1μA~10μA |
0.2%RD±5nA |
|
|
100nA~1μA |
0.2%RD±500pA |
|
|
10nA~100nA |
0.2%RD±50pA |
|
|
1nA~10nA |
0.2%RD±5pA |
|
|
10pA~1nA |
0.2%RD±200fA |
|
|
Current resolution |
10 fA |
|
|
Temperature Range |
(RT+10℃)～+200℃ (TDDB/HCI/NBTI) |
|
|
Other |
Support On-the-fly Test Support Vth Scan:0~200V Support Vramp Test Over Voltage/Current monitor |
|
Accuracy measurement conditions: temperature 23 ± 5 degrees, humidity 35% -60%, system operation time 1 hour, integration time LONG (below 1nA)
|
voltage source/Ichimoku Kinko Hyo |
|||||
|
voltage accuracy |
Range |
Resolution ratio |
Precision(1year) ±(%reading+polarization) |
Pink noise(effective value) 0.1 Hz-10Hz |
|
|
High-voltage power supply |
±3500 V |
40 mV |
0.02%+600 mV |
50 mV |
|
|
±1500 V |
20 mV |
0.02%+300 mV |
25 mV |
||
|
±600 V |
7mV |
0.02%+120 mV |
10 mV |
||
|
Low-pressure source |
±200 V |
100 μV |
0.02% + 40 mV |
1mV |
|
|
±20 V |
10 μV |
0.02% + 5 mV |
200μV |
||
|
±6 V |
1 μV |
0.02% + 500 μV |
60μV |
||
|
Temperature coefficient |
±(0.15 × precision index)/°C (0℃-18℃,28℃-50℃) |
||||
|
Set time |
<±1% (typical value Normal,Step is the range 10% to 90%，Full scale point, resistive load test) |
||||
|
Overshoot |
<±0.1%(Typical values, full scale points, resistive load tests) |
||||
|
current source/Table pointer |
||||
|
Current accuracy |
Range |
Resolution ratio |
Precision(1 year) ±(%reading+polarization) |
Typical noise(effective value) 0.1 Hz-10Hz |
|
±15 mA |
10 nA |
0.02% +2 μA |
±15 mA |
|
|
±1.5 mA |
1 nA |
0.2% + 150 nA |
±1.5 mA |
|
|
±150 μA |
100 pA |
0.2% + 20 nA |
±150 μA |
|
|
±15 μA |
10 pA |
0.2% +3 nA |
±15 μA |
|
|
±1.5 μA |
1 pA |
0.3% + 600 pA |
±1.5 μA |
|
|
±150 nA |
100fA |
0.5% + 300 pA |
±150 nA |
|
|
±10 nA |
10 fA |
0.5% + 5 pA |
1 pA |
|
|
Temperature coefficient |
±(0.15×precision index)/°C(0℃-18℃，28℃-50℃) |
|||
|
Set time |
<±1% (Typical value，Normal，The step is range10%to90%) |
|||
|
Overshoot |
<±0.1%(Typical values, full scale points, resistive load tests) |
|||
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