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Wafer Level Burn-In

WLR3500

HV SiC Wafer burn-in System


The WLR3500 wafer burn-in system is designed to perform HTGB and HTRB burn-in of 6 wafers at one time, which can switch the aging conditions automatically , perform Vth test for each die, meet different cost requirements according to different configuration requirements and implement configurable R&D applications and mass production applications for customers, the burn-in time can range from a few minutes to tens of hours or even thousands of hours, each channel can be provided with the over-current protection independently , and result MAP data can be provided for analysis.

Feature

  • Support multiple wafer aging

    Support aging of SiC and GaN wafer products
  • High precision parameter test

    Support parameter test Idss, Igss, Vth
  • High precision leakage current test

    The highest precision leakage current resolution can reach 0.1 nA
  • Nitrogen protection

    Support nitrogen protection to prevent high voltage spark and PAD oxidation
  • Overcurrent protection

    Overcurrent protection, short-circuit current instantaneous response<100 ns
  • High temperature resistant design

    Drawer heating related to 200 ℃
  • High temperature uniformity

    Uniformity ± 3 ℃, accuracy < 1 ℃, resolution 0.1 ℃
  • Rich software functions

    Support online editing and testing Recipe / SPEC

Functions and advantages


  • Fixture, single-layer drawer and whole rack

    HV SiC Wafer burn-in System WLR3500 has three levels fixture, single-layer drawer and whole rack. Each layer can work independently.

    Fixture design The fixture is divided into two parts, Chuck and Probe card, and the wafers are combined by the Aligner equipment and put into the aging system for aging. In order to meet the number of wafer channels, the Pogo Pin life is 100,000 crimps, the temperature resistance is 175 degrees, and the positioning accuracy is ±50μm; Chuck with heating function, heating power 300W, room temperature to 175 degrees within 20 minutes, heat sink internal temperature sensor, temperature uniformity can be ±3 °C, accuracy less than 1 °C, resolution 0.1 °C. 
  • Single-layer drawer design

    Circuit of Each layer can be independently controlled, each single-layer works can be implemented in different modes, and different burn-in verification can be performed by the burn-in plan.


Parameterndex
Applicable products GaN, SiC Wafer
Applicable packaging 4inch,6inch Wafer
Aging parameters HTGB, HTRB
Test parameters Igss, Idss, Vth
System size(mm)

2100(W) X 1900(H) X 1800(D)

System power consumption <32 kW
Nitrogen protection >0.6 mPa Access
temperature range Normal temperature - 200 ℃
Voltage range Gate ± 75 V, source 2000 V
System channel 720
Number of system layers 6th floor
Current voltage overshoot No overshoot in any case
MES docking Support MES docking

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