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Wafer Level Burn-In

WLBI370A

Wafer Level Burn-in System



The WLBI370A Wafer Level Burn-in System is a fully automated SiC wafer burn-in testing solution. It offers ultra-high burn-in capacity, capable of performing High-Temperature Gate Bias (HTGB) burn-in on up to 20 wafers simultaneously. Burn-in conditions can be configured to meet the requirements of different products. The system enables precise threshold voltage (Vth) testing for each die and features independent overcurrent protection on each channel to ensure device safety. It supports integration with customer EAP systems for production data management and automatically generates MAP data for detailed performance analysis and quality control.




Features

  • Fully Automated System

    Automated wafer and fixture loading/unloading without manual intervention
  • High Throughput

    Supports simultaneous HTGB burn-in of up to 20 wafers at full capacity
  • High Compatibility

    Easy switching between 6-inch and 8-inch wafers by replacing fixtures
  • Independent Temperature Control

    Each drawer is equipped with independent temperature control and power systems, ensuring precise and stable burn-in conditions for each wafer
  • Multi-channel Testing

    Supports up to 1,500 channels per layer for burn-in
    Burn-in channel capacity can be expanded via second touchdown
  • High-precision Testing

    0.1nA leakage current resolution
  • Wide Temperature Range

    Temperature control ranges from 40°C to 175°C
  • Comprehensive System Features

    Real-time monitoring of Igss and Vth testing
    Robust hardware protection against overcurrent and overvoltage

Functions and Advantages

  • The Semight WLBI370A Wafer Level Burn-in System consists of the main system, burn-in layers, and burn-in fixtures. The main system includes wafer handling and coupling mechanisms, fixture loading and unloading mechanisms, burn-in chambers, and cooling units. Each burn-in chamber can hold up to 10 burn-in layers, with a maximum configuration of 20 layers. Each burn-in layer accommodates one fixture (wafer), enabling simultaneous burn-in of up to 20 wafers in a fully equipped setup.


The specific configuration is as follows:

Suitable for

SiC Wafer

Applicable Packages

6-inch, 8-inch Wafer

Burn-in Type

HTGB

Test Parameters

Igss, Vth

System Size

3000mm(W) X 2500mm(H) X 4500mm(D)

Nitrogen Protection

Yes

Temperature Range

45°C  to 175°C

Voltage Range

Gate ±70V

System Channels/ Layer

1500

System Layers

20

Supports Cassette Feeding

Up to 50 PCS

(Uploading area: 2 cassettes, with 1 cassette:
If wafer warp is less than 500μm, it can accommodate 25 pcs.
If wafer warp is between 500μm and 3mm, it can accommodate 13 pcs.

Power Supply

380V, 20A three-phase, 50-60Hz

Software System

Windows

Software Language Environment

VS/C#

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