Wafer Level Burn-In
WLBI3810
Wafer Level Burn-in System
Semight WLBI3810 Wafer Level Burn-In System is a high-end burn-in test equipment specifically designed for SiC and GaN wafers, featuring efficient and precise testing capabilities. This system can simultaneously perform High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) burn-in tests on 9 wafers, with a testing time range from several minutes to thousands of hours, flexibly adapting to the burn-in requirements of different products. This equipment features a fully
automated loading and unloading system, incorporates a three-cassette design,
supports seamless test mode switching, and automatically adjusts burn-in
conditions, ensuring both efficiency and continuity throughout the testing
process.
The system is capable of high-precision detection of the threshold voltage (Vth) for each die, ensuring the accuracy of test data. Each test channel is equipped with an independent over-current protection function, effectively safeguarding the safety of the devices under test. Additionally, the system can generate detailed map data, providing users with comprehensive performance analysis and quality control references. The WLBI3810 system provides
reliable solutions for diverse testing needs, from stable burn-in tests in
large-scale batch production to flexible configuration in R&D.
Features
Automated Loading and Unloading
Fully automated wafer handling minimizes manual intervention, boosting efficiency and accuracy
Precise Probing
Delivers ±10μm probe mark repositioning accuracy for reliable testing
Comprehensive System Features
Supports map data binding for traceability and testing up to 4224 dies simultaneously
Multimode Burn-in
Automatically switches between HTGB and HTRB modes
Leakage Current Monitoring
Igss and Idss leakage current moitoring
Integrated Testing Functions
Includes Vth parameter testing for in-depth analysis
Exceptional Measurement Accuracy
Offers maximum resolution of 0.1nA
Precise Temperature Control
Ensures uniformity within ±3℃, accuracy within 1℃, and resolution of 0.1℃Functions and Advantages
System Configuration
The system accommodates up to nine burn-in stations, each dedicated to a single wafer and independently controlled. This design enables multiple stations to operate in different modes simultaneously, and supports various burn-in verifications by running the burn-in plan.|
No. |
Module |
Part Number |
Description |
|
1 |
System Cabinet |
WLBI3810-M |
Includes system frame, electric cabinet, and loading/unloading machine Supports fully automated wafer loading and unloading Achieves probe mark repositioning accuracy of ±10μm Supports map data binding with traceable data Automatically switches between HTGB and HTRB modes Test Igss and Idss leakage Integrates Vth parameter testing Offers flexible configuration of burn-in plans Supports SECS/GEM communication interface Software supports local data and database uploads, and EAP integration Supports CP map data import Supports online editing of test recipes Software supports three-level permission management and multi-account management Note: HTGB + HTRB: Fully equipped with 9 stations |
|
2 |
Burn-in Layer |
WLBI3810-L |
High precision leakage current test, the highest precision leakage current resolution can be 0.1nA. Supports nitrogen protection to prevent high-voltage arcing and pad oxidation. Temperature uniformity ≤±3℃, accuracy ≤1℃, resolution 0.1℃. High-density probe card and support for high-voltage chuck. High-precision and high-reliability heating and temperature control system. Compatible with 6- and 8-inch wafers. Full Touch: Burn-in all Dies at once, up to 4224 Dies. One year of free maintenance. Note: HTGB + HTRB: Fully equipped with 9 stations. |
|
3 |
Burn-in Fixture |
WLBI3810-F |
Designed for SiC wafer burn in: HTGB + HTRB Supports 6- and 8-inch wafers Supports up to 4224 dies |
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