Wafer Level Burn-In
WLBI3800
Wafer level Burn-in System
The WLBI3800 Wafer Level Burn-in System is a high-end, specialized SiC wafer burn-in testing solution capable of performing High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) burn-in on up to 3 wafers simultaneously. It supports a wide range of burn-in durations, from a few minutes to several hours, and can extend to thousands of hours, meeting the burn-in requirements of various products. The system integrates an automated loading and unloading system with a dual-cassette design for seamless switching. It features automatic adjustment of burn-in conditions and precise threshold voltage (Vth) measurement for each die. Each channel is equipped with independent overcurrent protection to ensure the safety of the devices under test. Additionally, the system generates Map data for detailed performance analysis and quality control. It provides stable and reliable burn-in testing support for mass production and flexible configuration options for R&D applications.
Features
Automated Loading and Unloading
Fully automated wafer handling minimizes manual intervention, boosting efficiency and accuracy
Precise Probing
Delivers ±25μm probe mark repositioning accuracy for reliable testing
Comprehensive System Features
Supports map data binding for traceability and testing up to 2112 dies simultaneously
Multimode Burn-in
Automatically switches between HTGB and HTRB modes
Leakage Current Monitoring
Igss and Idss leakage current moitoring
Integrated Testing Functions
Includes Vth parameter testing for in-depth analysis
Exceptional Measurement Accuracy
Offers maximum resolution of 0.1nA
Precise Temperature Control
Ensures uniformity within ±3℃, accuracy within 1℃, and resolution of 0.1℃Functions and Advantages
System Configuration
The system supports up to three independent layers, each equipped with its own fixture and independently controlled circuits. This design allows each layer to operate in different modes, enabling flexible burn-in verification through customizable burn-in plans.|
No. |
Module |
Part Number |
Description |
|
1 |
System Cabinet |
WLBI3800-M |
Includes system rack, electrical cabinet, and loading/unloading machine Supports fully automated wafer loading and unloading Achieves probe mark repositioning accuracy of ±25μm Supports map data binding with traceable data Automatically switches between HTGB and HTRB modes Test Igss and Idss leakage Integrates Vth parameter testing Offers flexible configuration of burn-in plans Supports SECS/GEM communication interface Software supports local data and database uploads, and EAP integration Supports CP map data import Supports online editing of test recipes Software supports three-level permission management and multi-account management Note: HTGB + HTRB: Fully configured with 3 layers |
|
2 |
Burn-in Layer |
WLBI3800-L |
High-precision leakage current testing with a maximum resolution of 0.1nA. Supports nitrogen protection to prevent high-voltage arcing and pad oxidation. Temperature uniformity ≤±3℃, accuracy ≤1℃, resolution 0.1℃. High-density probe cards and support for high-voltage chuck. High-precision and high-reliability heating and temperature control system. Compatible with 6- and 8-inch wafers. Full touch interface allowing simultaneous burn-in up to 2112 dies. One year of free maintenance. Note: HTGB + HTRB: Fully configured with 3 layers.
|
|
3 |
Burn-in Fixture |
WLBI3800-F |
Designed for SiC wafer burn in: HTGB + HTRB Supports 6- and 8-inch wafers Supports up to 2112 dies |
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