PB6800, SiC, GaN, KGDHandler-Semight Instruments

Features

Excellent Scalability
Modular design accommodates loading, unloading
and multiple test stations for enhanced versatility
Dynamic, Static and UIS Tests
Static test 2000V/600A
Dynamic test 1200V/2000A
Unloading Modular Design
Support wafer/wafer + tape&reel/ wafer + auto tray
Precision Temperature Control
Maintain room temperature to 200°C with ±3°C accuracy and 0.1°C resolution
Airtight Socket Design
Prevent arcing with nitrogen gas protection and integrated pressure monitoring
High-efficiency Multi-site Testing
Up to six test sites deliver 4000+ UPH with 0.7s test times
Easy Maintainability
Support automatic socket replacement for blown die, enhancing runtime

Category	Parameter	Specification
Basic Parameters	Product type	SiC, IGBT
	UPH	Up to 4700UPH, including input & output
	Loader	Wafer, Auto-tray, Detape
	Unloader	Wafer / Wafer + Auto Tray / Wafer + Tape&Reel
Temperature System	Temp range	RT & HT up to 200°C
Temperature System	Temp stability	≤±3°C
Inspection System	Test station	Maximum 6
	Stray inductance	≤40nH
	Conversion kit	Socket
	Die size	2.5mm x 2.5mm to 8mm x 8mm
	Die thickness	100µm to 400µm
	Accuracy	±30µm
	Unloader	Wafer / Wafer +Auto Tray / Wafer+Tape&Reel
	Replace socket	Automatic
	Socket cleaning	Automatic
	AOI	6 side AOI
	AOI accuracy	≥12µm
	Defect detection	Front/back: scratches, dirt, foreign matter, cracked spot, unfilled corner, and chipping Side: chipping
Stability	MTBF	>168h
	MTBA	>2h
	MTTA	<5min
	MTTR	<30min
	Drop rate	≤0.01%
	Fragmentation rate	≤0.01%
	Probe mark depth	≤2µm
	Drain kelvin	≤2Ω

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