Wafer Level Burn-In
WLBI370A
Wafer Burn-In Testing System
Semight Instruments Wafer Burn-In Testing System WLBI370A applies to the screening of product reliability and quality monitoring of batch production. The whole system is designed to conduct single HTGB burn-in on 20 wafers, achieve automatic feeding/unloading and BI condition switching, and conduct Vth testing for each product. It meets different cost requirements based on various configuration needs, as well as the demands of customers for configurable R&D applications and high-capacity production. BI time can be configured as required, and the tested chip of each channel has separate over-current protection. MAP data is available for analysis.
Feature
Support SiC wafer product burn-in
Compatible with SiC wafers of 6&8 inchesMultiple test functions
Support parameter test Igss、Vth.Fully automatic burn-in syetem
Support 1500 channels/layer simultaneous burn-inFully automated integration
Wafer jam loading is fully automated and integratedHigh temperature resistant design
Drawer heating is designed to withstand 180°CThe minimum current measurement resolution can reach 0.1 nA
Accurate measurement of leakage currentPrecise temperature control
Uniformity ±1.5℃, accuracy<1℃, resolution 0.1℃Product anomaly protection funtion
The syetem hardware overcurrent protection supports nitrogen protection to prevent PAD oxidationFunctions and advantages
The system combines the form of integrated machine with Burn-In system and feeding/unloading system. This equipment provides more Burn-In channels, supporting simultaneous Burn-In of up to 1500 channels per wafer. It also offers more Burn-In drawers, supporting Burn-In of 20 drawers (wafers) simultaneously. By replacing different Burn-In fixtures and supporting fixtures, it enables rapid switching between aging requirements for 6-inch and 8-inch wafers.
Voltage Setting Accuracy |
Range |
Set Resolution |
Accuracy (1 year) ±(% of reading + offset) |
±70 V |
1m V |
0.1%+0.2 V |
|
Overshoot |
<1% (typical value) |
||
Total Power |
30W |
||
Number of Channels |
1 (per Burn-in layer) |
Voltage Meter Accuracy |
Range |
Screen Resolution |
Accuracy (1 year) ±(% of reading + offset) |
±70V |
1mV |
0.1%+0.2 V |
|
Number of Channels |
1 (per Burn-in layer) |
Current Meter Accuracy |
Range |
Screen Resolution |
Accuracy (1 year) ±(% of reading + offset) |
100 μA |
10 nA |
0.1% + 10nA |
|
10μA |
1nA |
0.1% + 5nA |
|
1 μA |
0.1 nA |
0.1% + 1 nA |
|
100 nA |
10 pA |
1% + 0.5 nA |
|
Number of Channels |
16 (per Burn-in layer) |
Current Meter Accuracy |
Range |
Screen Resolution |
Accuracy (1 year) ±(% of reading + offset) |
100mA |
10uA |
0.1% + 100 μA |
|
10 mA |
1uA |
0.1% + 10 μA |
|
|
1 mA |
100 nA |
0.1% + 5 μA |
Number of Channels |
1 (per Burn-in layer) |
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